Semiconductor Dies in PCBs Enhance Power Electronics Future
Berlin, Tuesday, 29 July 2025.
Integrating GaN and SiC MOSFETs into PCBs boosts efficiency in power electronics, vital for automotive tech, enabling compact, high-performance designs to meet Europe’s energy demands.
Advancements in Embedding Technology
The emergence of advanced semiconductor die embedding, particularly involving gallium nitride (GaN) and silicon carbide (SiC) MOSFETs, into PCB structures is transforming the power electronics landscape. This innovative technique significantly reduces parasitics, enhancing thermal management, and enabling power devices to operate at higher efficiencies and power densities [1]. By minimizing inductive parasitics, semiconductor dies can fully exploit the high-frequency potential of wide-bandgap (WBG) semiconductors. The result is a shift in power converter performance, allowing them to operate closer to their maximum ratings while reducing energy consumption and heat generation [1].
Key Features Supporting Efficiency
One notable feature of this technology is the integration of aluminum nitride (AlN) tiles within the PCB, onto which the semiconductor die is sintered. This provides exceptional thermal conductivity with maintained electrical isolation, significantly improving heat dissipation and operational reliability [1]. Furthermore, the reduced pollution degree afforded by embedded dies allows for relaxed clearance and creepage requirements, facilitating higher power densities—of particular importance in automotive and aerospace applications [1].
Technological Integration and System Benefits
The 3D integration capabilities of embedded die technology enable optimizations such as placing high-frequency ceramic decoupling capacitors and shunt resistors directly on top of the die. This significantly minimizes parasitic effects, enhancing circuit efficiency and reducing module sizes and weights [1]. Leading companies like RAM Innovations have embraced these advancements to develop heterogeneous PCB embedded die packaging specifically tailored for wide band gap semiconductors. As a result, power loop lengths are reduced, and parasitic inductance is minimized, ultimately lowering energy consumption and achieving a smaller module footprint [1].
High-Performance Module Testing
Recent testing of the GT1 power module, which features an embedded 100 V/7 mΩ GaN die, AlN ceramic tile, and copper terminals, has showcased impressive results. The embedded design offers enhancements in power density and efficiency over traditional surface mount approaches [1]. Notably, the GT1 module delivers a load current up to 17 A at 12 V, outperforming a discrete solution limited to 15 A due to thermal constraints. A water-cooled variant reportedly handled a constant current of 55 A, with junction temperatures of embedded dies reaching approximately 150 °C [1].