Breaking Through GaN's Testing Barrier: New Solutions for High-Voltage Power Devices
Online, Friday, 22 November 2024.
A significant breakthrough emerges in testing high-voltage GaN power devices, as industry leaders tackle the complex challenge of measuring ultra-fast switching currents. While traditional methods struggle with nanosecond transitions, new approaches combining advanced probing techniques and innovative measurement solutions promise to revolutionize power electronics testing. Key developments include Teledyne’s new isolation probes achieving 90dB common mode rejection at 1MHz and specialized IsoVu probes supporting measurements up to 1GHz bandwidth.
Navigating the Complex Terrain of GaN Testing
As the electronics industry continues to push the boundaries of power efficiency and miniaturization, Gallium Nitride (GaN) technology stands at the forefront, offering unparalleled switching speeds and power densities. However, testing these high-voltage devices poses significant challenges, particularly in accurately measuring the rapid current transitions that occur in nanoseconds. Traditional measurement tools often fall short, unable to keep pace with the dynamic nature of GaN semiconductors.
Advanced Probing Techniques
Teledyne LeCroy has introduced a new suite of voltage probing options designed specifically for GaN-based inverters, addressing the need for high bandwidth and effective common-mode noise rejection. Their HVD 3220 probe, for example, is rated for 2 kV and offers a bandwidth of 400 MHz, ensuring precise measurement in high-voltage environments. The DL-ISO series further enhances measurement accuracy with optical isolation and a common-mode rejection ratio of 85 dB at 1 MHz, crucial for minimizing interference in sensitive measurements[1].
Innovations in Current Measurement
Tektronix’s IsoVu Current Shunt Probes represent another leap forward, overcoming the limitations of traditional current transformers and Rogowski coils. These probes facilitate accurate measurements of low-level, dynamic currents across a nanosecond timescale, essential for power management in rapidly evolving sectors like IoT and mobile devices. With bandwidths extending to 1 GHz and low noise contributions, IsoVu probes are well-suited for high-frequency applications, such as in GaN power converters[2].
Collaborative Efforts and Future Prospects
In a collaborative push towards advancing GaN technology, Mouser Electronics, in partnership with Analog Devices and Bourns, has released an eBook exploring the challenges and benefits of GaN components in power applications. The publication highlights the transformative potential of GaN technology across various sectors, including automotive and renewable energy, and underscores the importance of overcoming current measurement hurdles to fully realize its benefits[3].
Conclusion: A New Era in Power Electronics Testing
The advancements in probing and measurement techniques signify a pivotal shift in how the industry approaches the testing of high-voltage GaN devices. By addressing the intricate challenges posed by these cutting-edge components, companies like Teledyne and Tektronix are setting new standards in power electronics testing. As these technologies continue to develop, they promise not only to enhance the efficiency and performance of GaN devices but also to drive innovation across the entire electronics landscape.