Infineon and ROHM Team Up to Advance Silicon Carbide Technology

Infineon and ROHM Team Up to Advance Silicon Carbide Technology

2025-09-26 power

Munich, Friday, 26 September 2025.
Infineon Technologies and ROHM Semiconductor are collaborating to enhance silicon carbide power electronics, aiming to improve customer flexibility and satisfaction in various applications.

Harnessing Silicon Carbide for Enhanced Power Electronics

Infineon Technologies and ROHM Semiconductor have embarked on a strategic collaboration, marked by their recent Memorandum of Understanding signed on September 25, 2025. This partnership aims to leverage silicon carbide (SiC) technology to enhance power electronics packages. The collaboration is designed to provide increased flexibility for customers by enabling each company to serve as a second source for selected SiC semiconductor products. This dual sourcing strategy is poised to enhance design and procurement flexibility, allowing customers to switch seamlessly between Infineon and ROHM products [1].

Advanced Packaging Solutions

As part of this agreement, ROHM will integrate Infineon’s cutting-edge top-side cooling platform for SiC, which includes various packages such as TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK. Meanwhile, Infineon will adopt ROHM’s DOT-247 package, which features a SiC half-bridge configuration. The DOT-247 package offers a significant improvement with 2.3 times higher power density compared to the traditional TO-247 package, alongside reduced thermal resistance and inductance, which collectively enhance performance in applications like automotive on-board chargers, renewable energies, and AI data centers [1][2].

Expanding Silicon Carbide Applications

The collaboration between Infineon and ROHM underscores the growing importance of SiC technology in meeting the increasing demand for efficient and high-performance power solutions. By expanding their package offerings to include both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN), they aim to broaden the range of solutions available to customers. This strategic expansion reinforces their commitment to innovation and adaptation in the rapidly evolving power electronics landscape [1][3].

Impact on the European Market

The European market, in particular, stands to benefit from these advancements as the region seeks to transition to more sustainable energy solutions. The enhanced SiC power electronics packages are expected to play a pivotal role in automotive, renewable energy, and industrial applications. The collaboration not only highlights the technological advancements but also emphasizes the companies’ dedication to driving innovation while ensuring compliance with stringent European regulatory standards [1][3][4].

sources

  1. www.infineon.com
  2. www.rohm.com
  3. investor.wolfspeed.com
  4. icscrm2025.org

power electronics silicon carbide