Axcelis and GE Aerospace Unite to Advance High-Voltage Power Devices

2025-08-20 power

Beverly, Wednesday, 20 August 2025.
Axcelis Technologies and GE Aerospace are collaborating to enhance semiconductor manufacturing for aerospace with high-voltage superjunction power devices, potentially revolutionizing energy efficiency in the sector.

Program Overview and Technical Specifications

On August 20, 2025, Axcelis Technologies, Inc. and GE Aerospace launched a joint development program (JDP) focused on high-voltage superjunction power devices, aiming to revolutionize semiconductor manufacturing processes tailored for the aerospace industry [1][2]. This collaboration will utilize Axcelis’ Purion XEmax™ high energy implanter, which offers the industry’s highest beam currents over a broad energy range of up to 15 MeV, essential for meeting the advanced specifications of aerospace applications [1].

Expected Efficiency Improvements and Market Impact

The integration of high-voltage silicon carbide (SiC) power devices is anticipated to significantly enhance energy efficiency in the aerospace sector. These devices play a critical role in emerging applications, including hypersonic travel, electric propulsion, and space exploration [1][2]. The global power electronics market is projected to grow at a compounded annual growth rate (CAGR) of 5.9% from 2025 to 2032, driven by increasing demand for energy-efficient technologies and electric mobility [7].

Compliance and Governance Aspects

The joint venture aligns with regulatory compliance and governance standards, considering the potential risks associated with forward-looking statements as outlined in SEC filings by Axcelis and GE Aerospace [1][2]. The collaboration forms part of the CLAWS Hub led by North Carolina State University, focusing on wide bandgap semiconductor advancements and supported by significant federal investments [3]. This program is strategically positioned to leverage such hubs for compliance and efficiency gains.

Future Developments and Industry Expectations

Looking forward, the partnership aims to support GE Aerospace’s ‘Advanced High Voltage Silicon Carbide Switches’ project, bolstering capabilities in manufacturing processes [1][2]. As North America anticipates the fastest growth in the wide bandgap semiconductors market from 2025 to 2034, the region remains pivotal for these advancements, aided by extensive R&D investments [8]. The application of SiC technology in the aerospace domain is set to pave the way for significant progression in the industry’s electronics ecosystem.

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semiconductors power devices